THRESHOLD CURRENT-DENSITY IN STRAINED LAYER INXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURE LASERS

被引：26

作者：

COLEMAN, JJ ^{[1
]}

BEERNINK, KJ ^{[1
]}

GIVENS, ME ^{[1
]}

机构：

[1] UNIV ILLINOIS,NATL SCI FDN,ENGN RES CTR COMPOUND SEMICOND MICROELECTR,URBANA,IL 61801

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1992年 / 28卷 / 10期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/3.159507

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we consider the transparency carrier density in ideal and practical strained layer InxGa1-xAs-GaAs quantum-well heterostructure lasers. The transparency carrier density in practical structures is then related to transparency current density using realistic values for spontaneous recombination rates. These parameters are incorporated with representative structural parameters into a nonlinear model for gain in a quantum-well laser, in order to provide a complete model for the laser threshold current density in strained layer InxGa1-xAs-GaAs quantum-well heterostructure lasers. These results are then compared and contrasted with experimental laser results from several laboratories.

引用

页码：1983 / 1989

页数：7

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