COMPARISON OF DMOS/IGBT-COMPATIBLE HIGH-VOLTAGE TERMINATION STRUCTURES AND PASSIVATION TECHNIQUES

被引：19

作者：

KOREC, J

HELD, R

机构：

[1] Daimler-Benz Research Institute Frankfurt, Germany

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 10期

关键词：

D O I：

10.1109/16.277343

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Single and multiple field plates are considered in conjunction with field-limiting rings and JTE junction terminations with and without an additional SIPOS-passivation. This comparison is done for shallow p-n junctions on n-type substrates doped to 1-2 x 10(14) cm-3 for the approached 500- or 1000-V devices, respectively. The conclusions gained by two-dimensional numerical simulations are checked experimentally. The best results have been obtained using a JTE structure with a SIPOS-passivation.

引用

收藏

页码：1845 / 1854

页数：10

相关论文

共 21 条

[1] THEORY AND BREAKDOWN VOLTAGE FOR PLANAR DEVICES WITH A SINGLE FIELD LIMITING RING [J].

ADLER, MS ;

TEMPLE, VAK ;

FERRO, AP ;

RUSTAY, RC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (02) :107-113

[2]

APPELS JA, 1980, PHILIPS J RES, P1

[3]

BALIGA BJ, 1987, MODERN POWER DEVICES

[4] COMPUTER STUDY OF A HIGH-VOLTAGE A P-PI-N--N+ DIODE AND COMPARISON WITH A FIELD-LIMITING RING STRUCTURE [J].

BOISSON, V ;

HELLEY, ML ;

CHANTE, JP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (01) :80-84

[5] THE CONTOUR OF AN OPTIMAL FIELD PLATE - AN ANALYTICAL APPROACH [J].

BRIEGER, KP ;

FALCK, E ;

GERLACH, W .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (05) :684-688

[6] BLOCKING CAPABILITY OF PLANAR DEVICES WITH FIELD LIMITING RINGS [J].

BRIEGER, KP ;

GERLACH, W ;

PELKA, J .

SOLID-STATE ELECTRONICS, 1983, 26 (08) :739-745

[7] COMPARISON OF DIFFERENT PLANAR PASSIVATION TECHNIQUES FOR SEMICONDUCTOR POWER DEVICES [J].

BRIEGER, KP ;

KOREC, J ;

THOMAS, B .

ARCHIV FUR ELEKTROTECHNIK, 1989, 72 (02) :89-94

[8]

CHARITAT G, 1991, SEP P S MADEP 91 FLO, P158

[9] SURFACE BREAKDOWN IN SILICON PLANAR DIODES EQUIPPED WITH FIELD PLATE [J].

CONTI, F ;

CONTI, M .

SOLID-STATE ELECTRONICS, 1972, 15 (01) :93-+

[10] 2-DIMENSIONAL ANALYSIS AND DESIGN CONSIDERATIONS OF HIGH-VOLTAGE PLANAR JUNCTIONS EQUIPPED WITH FIELD PLATE AND GUARD RING [J].

GOUD, CB ;

BHAT, KN .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (06) :1497-1504