COMPARISON OF DIFFERENT PLANAR PASSIVATION TECHNIQUES FOR SEMICONDUCTOR POWER DEVICES

被引:2
作者
BRIEGER, KP
KOREC, J
THOMAS, B
机构
来源
ARCHIV FUR ELEKTROTECHNIK | 1989年 / 72卷 / 02期
关键词
D O I
10.1007/BF01573642
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
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页码:89 / 94
页数:6
相关论文
共 16 条
[1]   THEORY AND BREAKDOWN VOLTAGE FOR PLANAR DEVICES WITH A SINGLE FIELD LIMITING RING [J].
ADLER, MS ;
TEMPLE, VAK ;
FERRO, AP ;
RUSTAY, RC .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (02) :107-113
[2]   A PROPOSED PLANAR JUNCTION STRUCTURE WITH NEAR-IDEAL BREAKDOWN CHARACTERISTICS [J].
AHMAD, S ;
AKHTAR, J .
IEEE ELECTRON DEVICE LETTERS, 1985, 6 (09) :465-467
[3]  
APPELS JA, 1980, PHILIPS J RES, V35, P1
[4]   COMPUTER STUDY OF A HIGH-VOLTAGE A P-PI-N--N+ DIODE AND COMPARISON WITH A FIELD-LIMITING RING STRUCTURE [J].
BOISSON, V ;
HELLEY, ML ;
CHANTE, JP .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (01) :80-84
[5]   BLOCKING CAPABILITY OF PLANAR DEVICES WITH FIELD LIMITING RINGS [J].
BRIEGER, KP ;
GERLACH, W ;
PELKA, J .
SOLID-STATE ELECTRONICS, 1983, 26 (08) :739-745
[6]   NUMERICAL INVESTIGATION OF THE BLOCKING CAPABILITY OF PLANAR P-N-JUNCTIONS EQUIPPED WITH FIELD PLATES [J].
BRIEGER, KP ;
GERLACH, W ;
LIONTAS, NA .
ARCHIV FUR ELEKTROTECHNIK, 1986, 69 (03) :165-174
[7]   LATERAL HVIC WITH 1200-V BIPOLAR AND FIELD-EFFECT DEVICES [J].
CHANG, MF ;
PIFER, G ;
YILMAZ, H ;
WILDI, EJ ;
HODGINS, RG ;
KING, OY ;
ADLER, MS .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (12) :1992-2001
[8]   PLANAR TERMINATION FOR HIGH-VOLTAGE P-N-JUNCTIONS [J].
GEORGESCU, S ;
DUNCA, T ;
SDRULLA, D ;
GHITA, I .
SOLID-STATE ELECTRONICS, 1986, 29 (10) :1035-1039
[9]  
HWANG KW, 1984, IEEE T ELECTRON DEV, V31, P1126, DOI 10.1109/T-ED.1984.21675
[10]   HIGH-VOLTAGE PLANAR P-N JUNCTIONS [J].
KAO, YC ;
WOLLEY, ED .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (08) :1409-+