MESOTAXY - SYNTHESIS OF BURIED SINGLE-CRYSTAL SILICIDE LAYERS BY IMPLANTATION

被引：37

作者：

WHITE, AE

SHORT, KT

DYNES, RC

HULL, R

VANDENBERG, JM

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1989年 / 39卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(89)90782-9

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：253 / 258

页数：6

共 23 条

[1]

Barbour J.C., 1988, MATER RES SOC S P, V107, P269

[2]

CAMPISI GJ, 1986, MATER RES SOC S P, V54, P747

[3]

GELD PV, 1971, SILITSIDI PEREKHODNI

[4] EPITAXIAL YTTRIUM SILICIDE ON (111) SILICON BY VACUUM ANNEALING [J].

GURVITCH, M ;

LEVI, AFJ ;

TUNG, RT ;

NAKAHARA, S .

APPLIED PHYSICS LETTERS, 1987, 51 (05) :311-313

[5]

HANSEN M, 1958, CONSTITUTION BINARY, P570

[6]

HEMMENT PLF, 1986, MATERIALS RESEARCH S, V53, P207

[7] ELECTRICAL TRANSPORT-PROPERTIES OF COSI2 AND NISI2 THIN-FILMS [J].

HENSEL, JC ;

TUNG, RT ;

POATE, JM ;

UNTERWALD, FC .

APPLIED PHYSICS LETTERS, 1984, 44 (09) :913-915

[8]

HENSEL JC, 1986, MATER RES SOC S P, V54, P499

[9] THEORETICAL CONSIDERATIONS ON ION CHANNELING EFFECT THROUGH SILICIDE-SILICON INTERFACE [J].

ISHIWARA, H ;

SAITOH, S ;

HIKOSAKA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (05) :843-848

[10] LIMITS OF COMPOSITION ACHIEVABLE BY ION-IMPLANTATION [J].

LIAU, ZL ;

MAYER, JW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (05) :1629-1635

← 1 2 3 →