ADMITTANCE SPECTROSCOPY OF ZNO CRYSTALS

被引：19

作者：

KANAI, Y

机构：

[1] Tokai University, Institute of Research and Development, Hiratsuka-shi, Kanagawa

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 08期

关键词：

Admittance spectroscopy; Deep level; Semiconductor; ZnO;

D O I：

10.1143/JJAP.29.1426

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To study the native center with the deep energy level in ZnO crystals, the experiment of admittance spectroscopy was performed for Au–ZnO Schottky diodes. The results agree fairly well with the theory of admittance spectroscopy, and by analysing the experimental data, the following results are obtained. The deep energy level is located at about 0.3 eV below the bottom of the conduction band. The electron-capture crosssection and the concentration of the center are found to be of the order of 10-15 c2 and 1017 cm-3, respectively. © 1990 The Japan Society of Applied Physics.

引用

页码：1426 / 1430

页数：5

共 19 条

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