ANALYSIS OF COHERENT AND INCOHERENT PHENOMENA IN PHOTOEXCITED SEMICONDUCTORS - A MONTE-CARLO APPROACH

被引：81

作者：

KUHN, T ^{[1
]}

ROSSI, F ^{[1
]}

机构：

[1] UNIV MODENA,DIPARTIMENTO FIS,I-41100 MODENA,ITALY

来源：

PHYSICAL REVIEW LETTERS | 1992年 / 69卷 / 06期

关键词：

D O I：

10.1103/PhysRevLett.69.977

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A generalized Monte Carlo procedure for the ultrafast dynamics of photoexcited carriers in a semiconductor is presented, where the coherence in the carrier system as well as band renormalization and excitonic effects in the Hartree-Fock approximation are fully taken into account. The details of the coherent generation process, the energy relaxation, and dephasing of the carriers are analyzed. The approach presents a numerical method for the investigation of phenomena occurring close to the band gap and those typical for the relaxation of hot carriers.

引用

页码：977 / 980

页数：4

共 19 条

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