THE ELECTRICAL AND RADIOACTIVE ASSESSMENT OF THE TRANSMUTATION DOPING OF GAAS FOLLOWING IMPLANTATION BY IN-111

被引:14
作者
GWILLIAM, R [1 ]
SEALY, BJ [1 ]
VIANDEN, R [1 ]
机构
[1] UNIV BONN,INST STRAHLEN & KERNPHYS,W-5300 BONN,GERMANY
关键词
D O I
10.1016/0168-583X(92)95178-T
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
A combination of electrical and radioactive analysis techniques has been employed to assess the transmutation doping of GaAs. Following annealing, the radioactive decay of implanted In-111(+), (t1/2 = 68 h), to the simple acceptor Cd-111 has been monitored by time dependent Hall effect measurements. The carrier concentration and resistivity time dependence show a half-life of 68 h. This shows for the first time that the information about the lattice surrounding of a probe atom obtained by perturbed gamma-gamma-angular correlation (PAC) measurements employing the Cd-111 nucleus refers to an electrically active dopant.
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页码:106 / 108
页数:3
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