IDENTIFICATION OF BAND-GAP STATES BY DEEP LEVEL TRANSIENT SPECTROSCOPY ON RADIOACTIVE PROBES - THE CASE OF AU AND PT IN SILICON

被引：68

作者：

PETERSEN, JW ^{[1
]}

NIELSEN, J ^{[1
]}

机构：

[1] CERN,ISOLDE COLLABORAT,CH-1211 GENEVA 23,SWITZERLAND

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 12期

关键词：

D O I：

10.1063/1.102587

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The deep level transient spectroscopy technique has been applied to silicon doped with radioactive impurities. The disappearance or appearance of features in the spectra following the transmutation of the incorporated radioactive atoms identifies an impurity involved in the centers observed. Results for Au and Pt diffused in Si are presented showing that Au occupies the same lattice position as Pt, which is known from electron paramagnetic resonance measurements to be substitutional.

引用

页码：1122 / 1124

页数：3

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