PHONON-LIMITED ELECTRON-MOBILITY IN SI(100) INVERSION LAYER AT LOW-TEMPERATURES

被引：22

作者：

SHINBA, Y ^{[1
]}

NAKAMURA, K ^{[1
]}

机构：

[1] GAKUSHUIN UNIV,DEPT PHYS,TOSHIMA KU,TOKYO 171,JAPAN

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1981年 / 50卷 / 01期

关键词：

D O I：

10.1143/JPSJ.50.114

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：114 / 120

页数：7

共 12 条

[1]

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[8] MANY-BODY EFFECTS IN SUBBAND STRUCTURE OF SI-MOS INVERSION LAYER [J].

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[9] MANY-BODY EFFECTS IN THE SI METAL-OXIDE-SEMICONDUCTOR INVERSION LAYER - SUBBAND STRUCTURE [J].

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