EDGE EFFECTS IN A GATED SUBMICRON RESONANT TUNNELING DIODE

被引：24

作者：

BETON, PH ^{[1
]}

DELLOW, MW ^{[1
]}

MAIN, PC ^{[1
]}

FOSTER, TJ ^{[1
]}

EAVES, L ^{[1
]}

JEZIERSKI, AF ^{[1
]}

HENINI, M ^{[1
]}

BEAUMONT, SP ^{[1
]}

WILKINSON, CDW ^{[1
]}

机构：

[1] UNIV GLASGOW,DEPT ELECTR & ELECT ENGN,GLASGOW G12 8QQ,SCOTLAND

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 20期

关键词：

D O I：

10.1063/1.106949

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the current-voltage [I(V)] characteristics of a gated GaAs/(AlGa)As resonant tunneling diode. As the negative gate voltage is progressively increased I(V) becomes asymmetric. In particular the peak-to-valley ratio in forward bias is decreased from congruent-to 20 to congruent-to 1, but in reverse bias remains constant congruent-to 20. This arises from a lateral variation of the voltage drop across the emitter tunnel barrier, which in forward bias leads to a smearing of the resonance. We discuss the relationship between our experiment and the low peak-to-valley ratios of two-terminal submicron resonant tunneling diodes observed by other groups.

引用

页码：2508 / 2510

页数：3

共 9 条

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