LATERAL SOLID-PHASE EPITAXY OF AMORPHOUS SI FILMS UNDER ULTRAHIGH PRESSURE

被引：7

作者：

ISHIWARA, H ^{[1
]}

WAKABAYASHI, H ^{[1
]}

MIYAZAKI, K ^{[1
]}

FUKAO, K ^{[1
]}

SAWAOKA, A ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,ENGN MAT RES LAB,MIDORI KU,YOKOHAMA,KANAGAWA 227,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 1B期

关键词：

SI; SIO2; LATERAL SOLID PHASE EPITAXY (L-SPE); SOI; ULTRAHIGH PRESSURE; RANDOM CRYSTALLIZATION;

D O I：

10.1143/JJAP.32.308

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of hydrostatic pressure on the lateral solid phase epitaxy (L-SPE) of amorphous Si (a-Si) films has been investigated. It has been found from the annealing experiment under ultrahigh pressure up to 2 GPa (20 kbar) that both the L-SPE growth rate and the nucleation rate of polycrystalline grains are increased with increase in pressure, when uncoated a-Si films are used. It has also been found that the nucleation rate is decreased and a greater L-SPE length can be achieved when a-Si films are coated with SiO2 films prior to L-SPE.

引用

页码：308 / 311

页数：4

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