EFFECT OF SINX COATING IN LATERAL SOLID-PHASE EPITAXY OF IMPLANTED AMORPHOUS SI FILMS

被引：2

作者：

ISHIWARA, H

FUKAO, K

机构：

[1] Research Laboratory of Precision Machinery and Electronics, Tokyo Institute of Technology, Midoriku, Yokohama, 227

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1991年 / 55卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(91)96236-E

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The effect of a SiN(x) coating was investigated in lateral solid phase epitaxy (L-SPE) of implanted amorphous Si (a-Si) films. It was found that the L-SPE growth rate decreased with increasing thickness of the SiN(x) film. The internal stress of a-Si films derived from the change of the growth rate was on the order of 5 x 10(9) dyn/cm2. A model to explain these phenomena is presented.

引用

页码：585 / 588

页数：4

共 7 条

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