PHOTOINDUCED TRANSIENT SPECTROSCOPY PITS STUDY ON UNDOPED LEC GROWN SEMI-INSULATING GAAS

被引：15

作者：

FANG, ZQ ^{[1
]}

SHAN, L ^{[1
]}

SCHLESINGER, TE ^{[1
]}

MILNES, AG ^{[1
]}

机构：

[1] CHINESE ACAD SCI,INST SEMICOND,BEIJING,PEOPLES R CHINA

来源：

SOLID-STATE ELECTRONICS | 1989年 / 32卷 / 05期

关键词：

D O I：

10.1016/0038-1101(89)90131-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：405 / 411

页数：7

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