CHANGES IN THE ELECTRONIC-PROPERTIES OF BULK GAAS BY THERMAL ANNEALING

被引：13

作者：

ASOM, MT

PARSEY, JM

KIMERLING, LC

SAUER, R

THIEL, FA

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 18期

关键词：

D O I：

10.1063/1.99102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1472 / 1474

页数：3

相关论文

共 13 条

[1] BEHAVIOR OF LATTICE DEFECTS IN GAAS
BLANC, J
WEISBERG, LR
BUBE, RH
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (02) : 225 - &
[2] HEAT TREATMENT OF GALLIUM ARSENIDE
EDMOND, JT
[J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (08) : 1428 - 1430
[3] OHMIC CONTACTS TO SOLUTION-GROWN GALLIUM ARSENIDE
HARRIS, JS
NANNICHI, Y
PEARSON, GL
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) : 4575 - &
[4] STOICHIOMETRY-CONTROLLED COMPENSATION IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS
HOLMES, DE
CHEN, RT
ELLIOTT, KR
KIRKPATRICK, CG
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (01) : 46 - 48
[5] PHOTOLUMINESCENCE STUDY OF THERMAL CONVERSION IN GAAS GROWN FROM SILICA BOATS
HWANG, CJ
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (12) : 5347 - &
[6] THERMAL-CONVERSION OF GAAS
KLEIN, PB
NORDQUIST, PER
SIEBENMANN, PG
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) : 4861 - 4869
[7] INVERTED THERMAL-CONVERSION - GAAS, A NEW ALTERNATIVE MATERIAL FOR INTEGRATED-CIRCUITS
LAGOWSKI, J
GATOS, HC
KANG, CH
SKOWRONSKI, M
KO, KY
LIN, DG
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (14) : 892 - 894
[8] SEMICONDUCTING SEMIINSULATING REVERSIBILITY IN BULK GAAS
LOOK, DC
YU, PW
THEIS, WM
FORD, W
MATHUR, G
SIZELOVE, JR
LEE, DH
LI, SS
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (17) : 1083 - 1085
[9] OUT-DIFFUSION OF THE MAIN ELECTRON TRAP IN BULK GAAS DUE TO THERMAL-TREATMENT
MAKRAMEBEID, S
GAUTARD, D
DEVILLARD, P
MARTIN, GM
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (02) : 161 - 163
[10] THERMODYNAMIC EVALUATION OF SIMPLE SOLUTION TREATMENT OF GA-P, IN-P AND GA-AS SYSTEMS
PANISH, MB
[J]. JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) : 6 - 20