MATERIALS ASPECTS OF SILICIDES FOR ADVANCED TECHNOLOGIES

被引：19

作者：

MAEX, K

机构：

[1] Interuniversity Microelectronics Center (IMEC v.z.w.), 3001 Leuven

来源：

APPLIED SURFACE SCIENCE | 1991年 / 53卷

关键词：

D O I：

10.1016/0169-4332(91)90282-O

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The scaling down of device lateral dimensions imposes severe restrictions on the depth of shallow junctions and on the length of poly-Si runners. In this report an overview is given on the current understanding of the formation of self-aligned silicides, of defect generation and annihilation during silicidation, of silicidation of narrow lines and their thermal stability, and also on the recent evolutions in the formation of buried and surface epitaxially aligned CoSi2.

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页码：328 / 337

页数：10

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