DEGRADATION OF THE POLY-SI SILICIDE STRUCTURE IN ADVANCED MOS-TECHNOLOGIES

[1] FORMATION OF THIN-FILMS OF COSI2 - NUCLEATION AND DIFFUSION MECHANISMS [J]. THIN SOLID FILMS, 1985, 128 (3-4) : 283 - 297

[2] Lau S. S., 1978, Thin films. Interdiffusion and reactions, P433

[3] LIPPENS P, 1988, 6TH INT C ION BEAM M

[4] LIU R, 1987, MAY P S ULSI SCI TEC, P446

[5] STABILITY OF POLYCRYSTALLINE SILICON-ON-COBALT DISILICIDE SILICON STRUCTURES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 865 - 869

[6] PROBST V, 1987, 17TH P ESSDERC, P437

[7] NMOS RING OSCILLATORS WITH COBALT-SILICIDED P-DIFFUSED SHALLOW JUNCTIONS FORMED DURING THE POLY-PLUG CONTACT DOPING CYCLE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (09) : 1321 - 1328

[8] VANDENHOVE L, THESIS KATHOLIEKE U, P154

[9] INTERACTIONS IN CO-SI THIN-FILM SYSTEM .2. DIFFUSION-MARKER EXPERIMENTS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 4011 - 4020

[1] FORMATION OF THIN-FILMS OF COSI2 - NUCLEATION AND DIFFUSION MECHANISMS [J]. THIN SOLID FILMS, 1985, 128 (3-4) : 283 - 297

[2] Lau S. S., 1978, Thin films. Interdiffusion and reactions, P433

[3] LIPPENS P, 1988, 6TH INT C ION BEAM M

[4] LIU R, 1987, MAY P S ULSI SCI TEC, P446

[5] STABILITY OF POLYCRYSTALLINE SILICON-ON-COBALT DISILICIDE SILICON STRUCTURES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 865 - 869

[6] PROBST V, 1987, 17TH P ESSDERC, P437

[7] NMOS RING OSCILLATORS WITH COBALT-SILICIDED P-DIFFUSED SHALLOW JUNCTIONS FORMED DURING THE POLY-PLUG CONTACT DOPING CYCLE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (09) : 1321 - 1328

[8] VANDENHOVE L, THESIS KATHOLIEKE U, P154

[9] INTERACTIONS IN CO-SI THIN-FILM SYSTEM .2. DIFFUSION-MARKER EXPERIMENTS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 4011 - 4020