THE CHARGE-HANDLING CAPACITY OF BURIED-CHANNEL STRUCTURES UNDER HOT-ELECTRON CONDITIONS

被引：4

作者：

HESS, K ^{[1
]}

SHICHIJO, H ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 02期

关键词：

D O I：

10.1109/T-ED.1980.19889

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：503 / 504

页数：2

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