ION-BEAM-INDUCED EPITAXY IN B-IMPLANTED SILICON PREAMORPHIZED WITH GE IONS

The ion-beam-induced epitaxial crystallization (IBIEC) of B+-implanted Si(100) layers, which are preamorphized by Ge+ ion implantation, has been studied by a 400 keV Ar+-ion irradiation at temperature ranges from 300 to 475-degrees-C. A minimum Rutherford backscattering yield of the regrowth layer is improved to 7.8% for an Ar+ ion dose of 1.3 x 10(16)/cm2 at a substrate temperature of 400-degrees-C. The activation energy for IBIEC is estimated to be 0.22 eV. A peak of the B depth profile evaluated by secondary ion mass spectroscopy is shifted to about 35 nm toward the surface after Ar+ ion irradiation. However, the electrical activation of the implanted B atoms is restricted within about 10%. It is also demonstrated that the lateral crystallinity of the amorphous layer can be recovered selectively by the IBIEC technique.