ION-BEAM INDUCED EPITAXY OF DEPOSITED AMORPHOUS SI AND SI-GE FILMS

被引：13

作者：

YU, AJ ^{[1
]}

MAYER, JW ^{[1
]}

EAGLESHAM, DJ ^{[1
]}

POATE, JM ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 23期

关键词：

D O I：

10.1063/1.101523

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2342 / 2344

页数：3

共 11 条

[1] PSEUDOMORPHIC GROWTH OF GEXSI1-X ON SILICON BY MOLECULAR-BEAM EPITAXY [J].

BEAN, JC ;

SHENG, TT ;

FELDMAN, LC ;

FIORY, AT ;

LYNCH, RT .

APPLIED PHYSICS LETTERS, 1984, 44 (01) :102-104

[2] EVIDENCE FOR VOID INTERCONNECTION IN EVAPORATED AMORPHOUS-SILICON FROM EPITAXIAL CRYSTALLIZATION MEASUREMENTS [J].

BEAN, JC ;

POATE, JM .

APPLIED PHYSICS LETTERS, 1980, 36 (01) :59-61

[3] ION-BEAM INDUCED EPITAXIAL CRYSTALLIZATION OF SILICON [J].

ELLIMAN, RG ;

JOHNSON, ST ;

POGANY, AP ;

WILLIAMS, JS .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR) :310-315

[4] ION-BEAM INDUCED EPITAXY OF SILICON [J].

GOLECKI, I ;

CHAPMAN, GE ;

LAU, SS ;

TSAUR, BY ;

MAYER, JW .

PHYSICS LETTERS A, 1979, 71 (2-3) :267-269

[5]

ISHIZAKA A, 1982, MBECST2 SOC APPL PHY, P182

[6]

LAFERLA A, 1980, APPL PHYS LETT, V36, P59

[7]

LAFERLA A, 1987, PHOTON BEAM PLASMA E, P325

[8]

MAGEE CW, COMMUNICATION

[9]

OLSON GL, 1983, MATER RES SOC S P, V13, P141

[10]

POATE JM, 1982, LASER ANNEALING SEMI, pCH8

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