STRUCTURAL AND ELECTRICAL-PROPERTIES OF SI LAYERS IMPLANTED WITH VARIOUS GE ION DOSES

被引：5

作者：

KURIYAMA, K

TSUGITA, M

HAYASHI, N

机构：

[1] ELECTROTECH LAB,TSUKUBA,IBARAKI 305,JAPAN

[2] HOSEI UNIV,ION BEAM TECHNOL RES CTR,KOGANEI,TOKYO 184,JAPAN

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1991年 / 59卷

关键词：

REGROWTH RATE; SILICON;

D O I：

10.1016/0168-583X(91)95778-C

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Si layers amorphized with various Ge+ doses at 100 keV have been evaluated using Rutherford backscattering spectrometry and the van der Pauw technique. The recovery of crystallinity for the samples implanted with a critical dose (approximately 5 x 10(14)/cm2), required to amorphize silicon at 100 keV, is achieved by an annealing treatment of 550-degrees-C for 60 min. The rates of regrowth for the <100>-oriented samples annealed at 550-degrees-C are also discussed. The electrical properties of the implanted layer are not altered by annealing at 550-degrees-C for 60 min.

引用

页码：1116 / 1119

页数：4

共 14 条

[1]

AJIMERA AC, 1986, APPL PHYS LETT, V49, P1269

[2] COMPARISON OF ELECTRICAL DEFECTS IN GE+ AND SI+ PREAMORPHIZED BF2-IMPLANTED SILICON [J].