REGROWTH BEHAVIOR OF GE IMPLANTED (100) SI

被引：7

作者：

REVESZ, P ^{[1
]}

MAYER, JW ^{[1
]}

机构：

[1] CALTECH,PASADENA,CA 91125

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1979年 / 54卷 / 02期

关键词：

D O I：

10.1002/pssa.2210540210

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Regrowth kinetics of amorphous Si layers formed by implanting 75Ge ions to concentrations of about 0.5 at % into <100> Si are obtained by using 1.5 MeV 4He backscattering and channeling measurements. The growth of epitaxial Si is linear in time with an activation energy that coincides with that obtained on 28Si implanted‐amorphous Si. The Ge atoms occupy substitutional sites in the regrown layer. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA

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页码：513 / 516

页数：4

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