COMPARISON OF ELECTRONIC EFFECTS AND STRESS EFFECTS IN ENHANCING REGROWTH RATE OF ION-IMPLANTED AMORPHOUS SI

被引：18

作者：

PAI, CS

LAU, SS

SUNI, I

CSEPREGI, L

机构：

[1] TECH RES CTR FINLAND,SEMICOND LAB,ESPOO 15,FINLAND

[2] FRAUNHOFER INST FESTKORPERTECHNOL,D-8000 MUNCHEN 60,FED REP GER

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 11期

关键词：

D O I：

10.1063/1.96332

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1214 / 1216

页数：3

共 9 条

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[8] EFFECTS OF ELECTRICALLY ACTIVE IMPURITIES ON THE EPITAXIAL REGROWTH RATE OF AMORPHIZED SILICON AND GERMANIUM [J].

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