A THEORETICAL-MODEL OF THE FORMATION MORPHOLOGIES OF POROUS SILICON

被引：147

作者：

SMITH, RL ^{[1
]}

CHUANG, SF ^{[1
]}

COLLINS, SD ^{[1
]}

机构：

[1] MIT,DEPT MAT SCI & ENGN,CAMBRIDGE,MA 02139

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1988年 / 17卷 / 06期

关键词：

D O I：

10.1007/BF02652104

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：533 / 541

页数：9

相关论文

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