THE EFFECT OF LASER ANNEALING ON LASER-INDUCED DAMAGE THRESHOLD

被引:12
作者
KERR, NC
EMMONY, DC
机构
[1] Loughborough University of Technology, Department of Physics, Loughborough, Leicestershire
关键词
D O I
10.1080/09500349014550851
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
A significant enhancement of the single-shot laser-induced damage threshold of CaF2 and fused silica and a moderate enhancement for GaAs and Al has been observed as the result of laser annealing using an excimer laser operating at 248 nm. This phenomenon is primarily attributed to a reduction of the residual surface roughness of the samples. © 1990 Taylor & Francis Ltd.
引用
收藏
页码:787 / 802
页数:16
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