DEVELOPMENT OF AN INTENSE PULSED METALLIC ION-BEAM SOURCE

被引：6

作者：

NAKAGAWA, Y ^{[1
]}

ARIYOSHI, T ^{[1
]}

机构：

[1] OSAKA CITY UNIV,FAC ENGN,DEPT ELECT ENGN,OSAKA 558,JAPAN

来源：

IEEE TRANSACTIONS ON PLASMA SCIENCE | 1988年 / 16卷 / 04期

关键词：

D O I：

10.1109/27.3860

中图分类号：

O35 [流体力学]; O53 [等离子体物理学];

学科分类号：

070204 ; 080103 ; 080704 ;

摘要：

引用

页码：459 / 464

页数：6

共 18 条

[1]

BLINOV PI, 1982, SOV J PLASMA PHYS, V8, P539

[2] ON THE CURRENT INTENSITY LIMIT OF A VACUUM-ARC ION-SOURCE [J].

BROWN, IG .

IEEE TRANSACTIONS ON PLASMA SCIENCE, 1987, 15 (04) :346-350

[3] PULSED ION-BEAM IRRADIATION OF SILICON [J].

CHU, WK ;

MADER, SR ;

GOREY, EF ;

BAGLIN, JEE ;

HODGSON, RT ;

NERI, JM ;

HAMMER, DA .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1982, 194 (1-3) :443-447

[4]

DIDENKO AN, 1986, 6TH P INT C HIGH POW, P617

[5]

EROKHIN GP, 1986, 6TH P INT C HIGH POW, P637

[6]

GREENLY JB, 1986, 6TH P INT C HIGH POW, P196

[7] PRODUCTION OF HIGH-CURRENT METAL-ION BEAMS [J].

HIRVONEN, JK ;

CAROSELLA, CA ;

HUBLER, GK .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1981, 189 (01) :103-106

[8] ION-BEAM ANNEALING OF SEMICONDUCTORS [J].

HODGSON, RT ;

BAGLIN, JEE ;

PAL, R ;

NERI, JM ;

HAMMER, DA .

APPLIED PHYSICS LETTERS, 1980, 37 (02) :187-189

[9] PRODUCTION AND POST-ACCELERATION OF INTENSE ION-BEAMS IN MAGNETICALLY INSULATED GAPS [J].

HUMPHRIES, S ;

FREEMAN, JR ;

GREENLY, J ;

KUSWA, GW ;

MENDEL, CW ;

POUKEY, JW ;

WOODALL, DM .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (04) :1876-1895

[10] FRICTIONAL-PROPERTIES OF NICKEL AND COPPER IMPLANTED LOW-CARBON STEEL PLATES [J].

IWAKI, M ;

HAYASHI, H ;

KOHNO, A ;

YOSHIDA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (01) :31-35

← 1 2 →