LOW-TEMPERATURE THERMAL ANNEALING OF ARSENIC IMPLANTED SILICON

被引：5

作者：

SCOVELL, PD

YOUNG, JM

机构：

来源：

ELECTRONICS LETTERS | 1980年 / 16卷 / 16期

关键词：

D O I：

10.1049/el:19800426

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：614 / 615

页数：2

共 9 条

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AHMED, H .

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[8] SCANNING-ELECTRON-BEAM ANNEALING OF ARSENIC-IMPLANTED SILICON [J].

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[9] EFFECTS OF PULSED RUBY-LASER ANNEALING ON ARSENIC AND SB IMPLANTED SILICON [J].

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JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3261-3273

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