AUGER RECOMBINATION IN DIRECT-GAP SEMICONDUCTORS - EFFECT OF ANISOTROPY AND WARPING

被引：4

作者：

COMBESCOT, M

COMBESCOT, R

机构：

来源：

PHYSICAL REVIEW B | 1988年 / 37卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.37.8781

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：8781 / 8790

页数：10

共 9 条

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