4-WAVE MIXING VIA OPTICALLY GENERATED FREE-CARRIERS IN HG1-XCDXTE

被引：11

作者：

YUEN, SY

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 07期

关键词：

D O I：

10.1063/1.93619

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：590 / 592

页数：3

共 16 条

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JAIN, RK ;

KLEIN, MB .

APPLIED PHYSICS LETTERS, 1979, 35 (06) :454-456

[3] DEGENERATE 4-WAVE MIXING OF 10.6-MUM RADIATION IN HG1-XCDXTE [J].

JAIN, RK ;

STEEL, DG .

APPLIED PHYSICS LETTERS, 1980, 37 (01) :1-3

[4] AVALANCHE FORMATION AND HIGH-INTENSITY INFRARED TRANSMISSION LIMIT IN INAS, INSB, AND HG1-XCDXTE [J].

JAMISON, SA ;

NURMIKKO, AV .

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[5] FREQUENCY-DEPENDENCE OF 2-PHOTON ABSORPTION IN INSB AND HG1-XCDXTE [J].

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PIDGEON, CR ;

DEMPSEY, J .

PHYSICAL REVIEW B, 1980, 22 (02) :825-831

[6] BANDGAP-RESONANT OPTICAL-PHASE CONJUGATION IN NORMAL-TYPE HG1-XCDXTE AT 10.6 MU-M [J].

KHAN, MA ;

BENNET, RLH ;

KRUSE, PW .

OPTICS LETTERS, 1981, 6 (11) :560-562

[7]

KHAN MA, 1980, OPT LETT, V5, P261, DOI 10.1364/OL.5.000261

[8]

VANVECHTEN JA, 1970, 10TH P INT C PHYS SE, P82

[9] NON-PARABOLICITY AND EXCITON EFFECTS IN 2-PHOTON ABSORPTION IN ZINCBLENDE SEMICONDUCTORS [J].

WEILER, MH .

SOLID STATE COMMUNICATIONS, 1981, 39 (08) :937-940

[10] INTERBAND MAGNETOREFLECTANCE IN SEMICONDUCTING HG1-XCDXTE ALLOYS [J].

WEILER, MH ;

AGGARWAL, RL ;

LAX, B .

PHYSICAL REVIEW B, 1977, 16 (08) :3603-3607

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