OBSERVATION OF INP SURFACES AFTER (NH4)2SX TREATMENT BY A SCANNING TUNNELING MICROSCOPE

被引：7

作者：

KURIHARA, K

MIYAMOTO, Y

FURUYA, K

机构：

[1] Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro-ku, Tokyo, 152

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1993年 / 32卷 / 3B期

关键词：

AMMONIUM SULFIDE ((NH4)2SX); SURFACE STABILIZATION; SURFACE TREATMENT; STM; SEMICONDUCTOR SURFACE; INDIUM PHOSPHIDE (INP);

D O I：

10.1143/JJAP.32.L444

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InP surfaces after (NH4)2Sx treatment were observed by a scanning tunneling microscope (STM) in air. The stabilized image of the flat surface was observed on the sample after (NH4)2Sx treatment for 30 s. The rms roughness was measured as 0.08 nm. When no surface treatment was applied, the surface was very rough when observed in the constant current mode. Since the STM image of the same sample with Au/Pd coating showed a flat surface and the current-voltage characteristics at the convex and concave portions were different, fluctuation of electron states on the InP surface is concluded to be the cause of the observed roughness. This result shows that a stable InP surface can be obtained by (NH4)2Sx treatment.

引用

页码：L444 / L446

页数：3

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