IMPROVEMENT OF ORGANOMETALLIC VAPOR-PHASE EPITAXY REGROWN GAINAS/INP HETEROINTERFACE BY SURFACE-TREATMENT

被引：3

作者：

SUEMASU, T

MIYAMOTO, Y

FURUYA, K

机构：

[1] Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro-ku, Tokyo, 152

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1991年 / 30卷 / 10A期

关键词：

REGROWTH; INP; GAINAS; OMVPE; (NH4)2SX; PREHEATING PROCESS; TUNNELING DIODE;

D O I：

10.1143/JJAP.30.L1702

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is shown that the combined surface treatment of a (NH4)2S(x) treatment and preheating improves the regrown heterointerface of n-GaInAs/i-InP in organometallic vapor phase epitaxy (OMVPE). Properties of the regrown heterointerface were evaluated from voltage-current (V-I) characteristics of the n-GaInAs/i-InP/n-GaInAs tunneling diode. This surface treatment is useful for the fabrication of ultrafine-size structures of quantum-wire, -box and electron wave devices.

引用

页码：L1702 / L1704

页数：3

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