STRONGLY IMPROVED FREQUENCY-RESPONSE AT HIGH-OPTICAL INPUT POWERS FROM INGAASP COMPENSATED STRAIN MQW ELECTROABSORPTION MODULATORS

被引：16

作者：

SAHARA, R ^{[1
]}

MORITO, K ^{[1
]}

SATO, K ^{[1
]}

KOTAKI, Y ^{[1
]}

SODA, H ^{[1
]}

OKAZAKI, N ^{[1
]}

机构：

[1] FUJITSU LABS LTD,ATSUGI,KANAGAWA 24301,JAPAN

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1995年 / 7卷 / 09期

关键词：

D O I：

10.1109/68.414683

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InGaAsP MQW electroabsorption modulators with and without compensated strain were fabricated and tested, Compensated strain was employed to reduce the valence band discontinuity between the wed acid barrier, which decreased the heavy-hole carrier escape time, A short optical pulse coupled into the modulator was used to measure the enhancement in carrier escape time from strained compensated InGaAsP quantum wells, for the first time, As a result, the strained MQW sample demonstrated an improved frequency response when operated at high optical input powers and low fields.

引用

页码：1004 / 1006

页数：3

共 9 条

[1]

BIGAN E, 1991, ELECTRON LETT, V28, P1607

[2] HIGH-SPEED INGAASP/INGAASP MQW ELECTROABSORPTION MODULATOR WITH HIGH OPTICAL POWER HANDLING CAPACITY [J].