ENGINEERING OF BARRIER BAND-STRUCTURE FOR ELECTROABSORPTION MQW MODULATORS

被引：10

作者：

SAHARA, R

MORITO, K

SODA, H

机构：

[1] Fujitsu Laboratories Ltd., Atsugi 243-01

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 09期

关键词：

BAND STRUCTURE; ELECTROABSORPTION MODULATORS; SEMICONDUCTOR QUANTUM WELLS;

D O I：

10.1049/el:19940509

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The introduction of tensile strain to the barriers of InGaAsP multiquantum well, lambda = 1.55 mum, electroabsorption modulators is proposed. It decreases the valence band barrier height, and heavy hole escape time, which greatly increases the optical saturation intensity leading to smaller, lower capacitance modulators with greater power handling capabilities.

引用

页码：698 / 699

页数：2

共 5 条

[1] QUANTUM-WELL CARRIER SWEEP OUT - RELATION TO ELECTROABSORPTION AND EXCITON SATURATION [J].