MO-SILICIDED AND TI-SILICIDED LOW-RESISTANCE SHALLOW JUNCTIONS FORMED USING THE ION-IMPLANTATION THROUGH METAL TECHNIQUE

被引：23

作者：

NAGASAWA, E ^{[1
]}

OKABAYASHI, H ^{[1
]}

MORIMOTO, M ^{[1
]}

机构：

[1] NEC CORP, MICROELECTR RES LABS, ULTRA LSI RES LAB, TECH STAF, KAWASAKI, KANAGAWA 213, JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 03期

关键词：

D O I：

10.1109/T-ED.1987.22966

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：581 / 586

页数：6

共 7 条

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[3]

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[4]

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[5] A SELF-ALIGNED MO-SILICIDE FORMATION [J].

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[6] LOW-RESISTANCE MOS TECHNOLOGY USING SELF-ALIGNED REFRACTORY SILICIDATION [J].

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NAGASAWA, E .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (09) :1329-1334

[7] SELECTIVE TUNGSTEN SILICIDE FORMATION BY ION-BEAM MIXING AND RAPID THERMAL ANNEALING [J].

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