LOW-RESISTANCE MOS TECHNOLOGY USING SELF-ALIGNED REFRACTORY SILICIDATION

被引：30

作者：

OKABAYASHI, H

MORIMOTO, M

NAGASAWA, E

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 09期

关键词：

D O I：

10.1109/T-ED.1984.21708

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1329 / 1334

页数：6

共 15 条

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