THEORETICAL STUDY OF MICROWAVE OSCILLATION EFFICIENCY IN IMPROVED READ DIODES

被引：6

作者：

MISAWA, T

机构：

来源：

SOLID-STATE ELECTRONICS | 1971年 / 14卷 / 01期

关键词：

D O I：

10.1016/0038-1101(71)90046-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：29 / &

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共 22 条

[1] DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS
BARAFF, GA
[J]. PHYSICAL REVIEW, 1962, 128 (06): : 2507 - &
[2] DIFFUSION OF ELECTRONS IN SILICON TRANSVERSE TO A HIGH ELECTRIC FIELD
BARTELIN.DJ
PERSKY, G
[J]. APPLIED PHYSICS LETTERS, 1970, 16 (05) : 191 - &
[3] BLUE JL, 1969, BELL SYST TECH J, V48, P389
[4] TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS
CROWELL, CR
SZE, SM
[J]. APPLIED PHYSICS LETTERS, 1966, 9 (06) : 242 - &
[5] CURRENT TRANSPORT IN METAL-SEMICONDUCTOR BARRIERS
CROWELL, CR
SZE, SM
[J]. SOLID-STATE ELECTRONICS, 1966, 9 (11-1) : 1035 - &
[6] DELOACH BC, 1966, IEEE T ELECTRON DEV, VED13, P181
[7] EVANS WJ, 1969, IEEE T ELECTRON DEVI, VED16, P78
[8] AVALANCHE BREAKDOWN IN READ DIODES AND PIN DIODES
GIBBONS, G
SZE, SM
[J]. SOLID-STATE ELECTRONICS, 1968, 11 (02) : 225 - +
[9] IMPROVED PERFORMANCE OF MICROWAVE READ DIODES
JOHNSTON, RL
JOSENHANS, JG
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (03): : 412 - +
[10] READ DIODE-AN AVALANCHING TRANSIT-TIME NEGATIVE-RESISTANCE OSCILLATOR (SI IMPURITY EFFECTS E/T)
LEE, CA
BATDORF, RL
WIEGMANN, W
KAMINSKY, G
[J]. APPLIED PHYSICS LETTERS, 1965, 6 (05) : 89 - &