OXYGEN-RELATED ACTIVITY AND OTHER SPECIFIC ELECTRICAL-PROPERTIES OF SIMOX

被引：13

作者：

CRISTOLOVEANU, S

机构：

[1] Laboratoire de Physique des Composants à Semiconducteurs (UA CNRS), Institut National Polytechnique de Grenoble, ENSERG, 38016 Grenoble Cedex

来源：

VACUUM | 1991年 / 42卷 / 5-6期

关键词：

D O I：

10.1016/0042-207X(91)90056-O

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electrical measurements in SIMOX films which explore the activation of oxygen donors, the origin of unintentional impurities and the transport properties at low temperature are reported. Thermal donors and new donors are reviewed in terms of generation rate, energy level, temperature range, kinetics and annihilation. The influence of the parameters used in the synthesis of various SIMOX substrates is emphasized. Several sources of contamination (implantation, capping layer, annealing ambient) are identified by the Hall effect and MOS device characterization. The region with lower crystallinity situated near the buried interface is found to dominate photo-transport properties at very low temperatures. Enhanced performance of integrated circuits is obtained by lowering the temperature, in particular in totally depleted thin film transistors.

引用

页码：371 / 378

页数：8

共 25 条

[1]

ANTONOPOULOS J, 1989, J MATER SCI LETT, V8, P1379

[2]

CHOVET A, 1987, NOISE PHYSICAL SYSTE, P457

[3] THERMAL DONOR AND NEW DONOR GENERATION IN SOI MATERIAL FORMED BY OXYGEN IMPLANTATION [J].

CRISTOLOVEANU, S ;

PUMFREY, J ;

SCHEID, E ;

HEMMENT, PLF ;

ARROWSMITH, RP .

ELECTRONICS LETTERS, 1985, 21 (18) :802-804

[4] SILICON ON INSULATOR MATERIAL FORMED BY OXYGEN IMPLANTATION AND HIGH-TEMPERATURE ANNEALING - CARRIER TRANSPORT, OXYGEN ACTIVITY, AND INTERFACE PROPERTIES [J].

CRISTOLOVEANU, S ;

GARDNER, S ;

JAUSSAUD, C ;

MARGAIL, J ;

AUBERTONHERVE, AJ ;

BRUEL, M .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (07) :2793-2798

[5] PROFILING OF INHOMOGENEOUS CARRIER TRANSPORT-PROPERTIES WITH THE INFLUENCE OF TEMPERATURE IN SILICON-ON-INSULATOR FILMS FORMED BY OXYGEN IMPLANTATION [J].

CRISTOLOVEANU, S ;

LEE, JH ;

PUMFREY, J ;

DAVIS, JR ;

ARROWSMITH, RP ;

HEMMENT, PLF .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (09) :3199-3203

[6]

CRISTOLOVEANU S, 1988, MATER RES SOC S P, V107, P335

[7] DEPENDENCE OF SILICON-ON-INSULATOR TRANSISTOR PARAMETERS ON OXYGEN IMPLANTATION TEMPERATURE [J].

DAVIS, JR ;

TAYLOR, MR ;

SPILLER, GDT ;

SKEVINGTON, PJ ;

HEMMENT, PLF .

APPLIED PHYSICS LETTERS, 1986, 48 (19) :1279-1281

[8] PERFORMANCE AND PHYSICAL-MECHANISMS IN SIMOX MOS-TRANSISTORS OPERATED AT VERY LOW-TEMPERATURE [J].

ELEWA, T ;

BALESTRA, F ;

CRISTOLOVEANU, S ;

HAFEZ, IM ;

COLINGE, JP ;

AUBERTONHERVE, AJ ;

DAVIS, JR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (04) :1007-1019

[9]

ELEWA T, 1988, PHYSICS TECHNOLOGY A, P553

[10]

ELEWA T, 1988, ESSDERC 88, V41, pC4

← 1 2 3 →