SILICON ON INSULATOR MATERIAL FORMED BY OXYGEN IMPLANTATION AND HIGH-TEMPERATURE ANNEALING - CARRIER TRANSPORT, OXYGEN ACTIVITY, AND INTERFACE PROPERTIES

被引：30

作者：

CRISTOLOVEANU, S ^{[1
]}

GARDNER, S ^{[1
]}

JAUSSAUD, C ^{[1
]}

MARGAIL, J ^{[1
]}

AUBERTONHERVE, AJ ^{[1
]}

BRUEL, M ^{[1
]}

机构：

[1] CEA,CEN GRENOBLE,ELECTR & TECHNOL INFORMAT LAB,F-38041 GRENOBLE,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 07期

关键词：

D O I：

10.1063/1.339409

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2793 / 2798

页数：6

共 22 条

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