GAAS FILMS HETEROEPITAXIALLY GROWN ON SI SUBSTRATES BY MIXTURE BEAMS OF IONS AND MOLECULES

被引：3

作者：

TAMURA, S

TUZI, N

HYOUZOU, M

YOKOTA, K

KATAYAMA, S

机构：

[1] Kansai University, Suita, Osaka, Yamate-cho

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1992年 / 31卷 / 9A期

关键词：

ION BEAM DEPOSITION; MIXTURE BEAM OF IONS AND MOLECULES; GAAS FILMS; SI SUBSTRATES; HETEROEPITAXIAL GROWTH; LOW-TEMPERATURE GROWTH;

D O I：

10.1143/JJAP.31.2959

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin GaAs films were heteroepitaxially grown on Si substrates by mixture beams of 60 eV ions and neutral molecules without prebaking at a high temperature or intermediate layers. Surfaces of the Si substrates were amorphized by collision of the low-energy ions. The amorphous Si surface layers were automatically inserted between Si substrates and GaAs films and they served as a buffer layer to relieve strain due to large lattice mismatch and difference in coefficients of linear expansion between GaAs films and Si substrates.

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页码：2959 / 2963

页数：5

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