FRAMED RECESSED OXIDE SCHEME FOR DISLOCATION-FREE PLANAR SI STRUCTURES

被引:19
作者
MAGDO, I
BOHG, A
机构
关键词
D O I
10.1149/1.2131594
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:932 / 936
页数:5
相关论文
共 14 条
[1]  
APPELS JA, 1970, PHILIPS RES REP, V25, P118
[2]  
APPELS JA, 1971, PHILIPS RES REP, V26, P157
[3]  
APPELS JA, 1970, PHILIPS TECHNICAL RE, V7, P225
[4]   TOPOLOGY OF SILICON STRUCTURES WITH RECESSED SIO2 [J].
BASSOUS, E ;
YU, HN ;
MANISCALCO, V .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (11) :1729-1737
[5]  
BOHG A, UNPUBLISHED
[6]   RESIDUAL-STRESS IN SILICON-NITRIDE FILMS [J].
IRENE, EA .
JOURNAL OF ELECTRONIC MATERIALS, 1976, 5 (03) :287-298
[7]  
KOOI E, 1971, PHILIPS RES REP, V26, P116
[8]  
MAGDO I, 1975, THESIS U BUDAPEST
[9]  
PELTZER D, 1971, ELECTRONICS, V44, P52
[10]   METHODS TO IMPROVE SURFACE PLANARITY OF LOCALLY OXIDIZED SILICON DEVICES [J].
SAKAI, H ;
YOSHIMI, T ;
SUGAWARA, K .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (02) :318-320