ENHANCED DAMAGE ACCUMULATION IN CARBON-IMPLANTED SILICON

被引：8

作者：

DESOUZA, JP ^{[1
]}

BOUDINOV, H ^{[1
]}

FICHTNER, PFP ^{[1
]}

机构：

[1] UFRGS,ESCOLA ENGN,BR-90035 PORTO ALEGRE,RS,BRAZIL

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 26期

关键词：

D O I：

10.1063/1.111209

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The accumulation of damage in Si implanted with C-12+ was investigated experimentally using aligned Rutherford backscattering analysis. The damage profiles in Si implanted With C-12+ or B-11+ at 50 keV to the same doses and dose rate were compared. It was found that the damage accumulates at a noticeably higher rate by C-12+ implantation than by B-11+, especially for doses >2x10(15) cm-2. In order to explain our results we suggest that self-interstitial Si atoms are captured by the implanted C atoms, forming complex defects which are stable at room temperature.

引用

页码：3596 / 3597

页数：2

共 10 条

[1] ELECTRICAL ACTIVATION OF BORON COIMPLANTED WITH CARBON IN A SILICON SUBSTRATE [J].