VERY-LOW-TEMPERATURE EPITAXIAL SILICON GROWTH BY LOW-KINETIC-ENERGY PARTICLE BOMBARDMENT

被引：9

作者：

OHMI, T

MATSUDO, K

SHIBATA, T

ICHIKAWA, T

IWABUCHI, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1988年 / 27卷 / 11期

关键词：

D O I：

10.1143/JJAP.27.L2146

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L2146 / L2148

页数：3

共 9 条

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[2] LOW-TEMPERATURE SILICON EPITAXY BY LOW-ENERGY BIAS SPUTTERING [J].

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APPLIED PHYSICS LETTERS, 1988, 53 (05) :364-366

[3] INSITU SUBSTRATE-SURFACE CLEANING FOR VERY LOW-TEMPERATURE SILICON EPITAXY BY LOW-KINETIC-ENERGY PARTICLE BOMBARDMENT [J].

OHMI, T ;

ICHIKAWA, T ;

SHIBATA, T ;

MATSUDO, K ;

IWABUCHI, H .

APPLIED PHYSICS LETTERS, 1988, 53 (01) :45-47

[4] HIGH-RATE GROWTH AT LOW-TEMPERATURES BY FREE-JET MOLECULAR-FLOW - SURFACE-REACTION FILM-FORMATION TECHNOLOGY [J].

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MORITA, M ;

KOCHI, T ;

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KUMAGAI, H ;

ITOH, M .

APPLIED PHYSICS LETTERS, 1988, 52 (14) :1173-1175

[5]

OHMI T, 1988, 1ST INT S ADV MAT UL, P287

[6]

OHMI T, 1988, ULSI SCI TECHNOLOGY, V87, P574

[7]

OHMI T, 1987, ULSI SCI TECHNOLOGY, V87, P805

[8]

OHMI T, 1987, ULSI SCI TECHNOLOGY, V87, P761

[9] CRYSTALLINE AND ELECTRICAL CHARACTERISTICS OF SILICON FILMS DEPOSITED BY IONIZED-CLUSTER-BEAMS [J].

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SARIS, FW ;

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JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (04) :L181-L184

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