OPTIMUM SEMICONDUCTORS FOR HIGH-POWER ELECTRONICS

[1] THE EVOLUTION OF POWER DEVICE TECHNOLOGY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (11) : 1570 - 1591

[2] LOW-PRESSURE, METASTABLE GROWTH OF DIAMOND AND DIAMONDLIKE PHASES [J]. SCIENCE, 1988, 241 (4868) : 913 - 921

[3] [Anonymous], 1987, MODERN POWER DEVICES

[4] Baliga B. J., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P102

[5] Baliga B. J., 1982, International Electron Devices Meeting. Technical Digest, P264

[6] THE MOS DEPLETION-MODE THYRISTOR - A NEW MOS-CONTROLLED BIPOLAR POWER DEVICE [J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (08) : 411 - 413

[7] SEMICONDUCTORS FOR HIGH-VOLTAGE, VERTICAL CHANNEL FIELD-EFFECT TRANSISTORS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) : 1759 - 1764

[8] GALLIUM-ARSENIDE SCHOTTKY POWER RECTIFIERS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (06) : 1130 - 1134

[9] BALIGA BJ, 1988, HIGH VOLTAGE INTEGRA

[10] BALIGA BJ, 1984, POWER TRANSISTORS DE

[1] THE EVOLUTION OF POWER DEVICE TECHNOLOGY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (11) : 1570 - 1591

[2] LOW-PRESSURE, METASTABLE GROWTH OF DIAMOND AND DIAMONDLIKE PHASES [J]. SCIENCE, 1988, 241 (4868) : 913 - 921

[3] [Anonymous], 1987, MODERN POWER DEVICES

[4] Baliga B. J., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P102

[5] Baliga B. J., 1982, International Electron Devices Meeting. Technical Digest, P264

[6] THE MOS DEPLETION-MODE THYRISTOR - A NEW MOS-CONTROLLED BIPOLAR POWER DEVICE [J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (08) : 411 - 413

[7] SEMICONDUCTORS FOR HIGH-VOLTAGE, VERTICAL CHANNEL FIELD-EFFECT TRANSISTORS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) : 1759 - 1764

[8] GALLIUM-ARSENIDE SCHOTTKY POWER RECTIFIERS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (06) : 1130 - 1134

[9] BALIGA BJ, 1988, HIGH VOLTAGE INTEGRA

[10] BALIGA BJ, 1984, POWER TRANSISTORS DE