MECHANISM OF CARBON AND OXYGEN INCORPORATION IN SILICON SINGLE-CRYSTALS GROWN BY THE CZOCHRALSKI (CZ) TECHNIQUE

被引:12
作者
SCARLETE, M [1 ]
机构
[1] RES & PROD SEMICOND MAT,BUCHAREST,ROMANIA
关键词
D O I
10.1149/1.2069368
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
This paper presents a new model related to the incorporation of oxygen and carbon in silicon single crystals grown by the Czochralski (Cz) method. The segregation processes of oxygen and carbon involve several chemical species and are not independent. The connection is due to the presence of the CO molecule not only in the gas phase but also in the molten silicon and in the solidifying crystal. This model proposes the utlization of a global segregation coefficient in order to explain the scatter in the values of the current effective segregation coefficient of oxygen reported in literature.
引用
收藏
页码:1207 / 1212
页数:6
相关论文
共 17 条
[11]   CONTROL OF CARBON IN CZOCHRALSKI SILICON-CRYSTALS [J].
SERIES, RW ;
BARRACLOUGH, KG .
JOURNAL OF CRYSTAL GROWTH, 1983, 63 (01) :219-221
[12]  
SHIMURA F, 1988, SILICON SEMICONDUCTO, P162
[13]  
STERNBERG S, 1990, 11TH P ANN C SEM, P242
[14]   CONCENTRATION, SOLUBILITY, AND EQUILIBRIUM DISTRIBUTION COEFFICIENT OF NITROGEN AND OXYGEN IN SEMICONDUCTOR SILICON [J].
YATSURUGI, Y ;
AKIYAMA, N ;
ENDO, Y ;
NOZAKI, T .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (07) :975-979
[15]   OXYGEN PARTITIONING ANALYSIS DURING CZOCHRALSKI SILICON CRYSTAL-GROWTH VIA A DOPANT MARKER AND A SIMPLE TRANSFER-FUNCTION MODELING TECHNIQUE .1. ROTATION RATE TRANSIENTS [J].
YEN, CT ;
TILLER, WA .
JOURNAL OF CRYSTAL GROWTH, 1991, 109 (1-4) :142-148
[16]  
Zulehner W, 1982, SILICON CHEM ETCHING
[17]  
GMELINS HDB INORGANI