ANNEALED CZOCHRALSKI GROWN SILICON-CRYSTALS - A NEW MATERIAL FOR THE MONOCHROMATIZATION OF SYNCHROTRON RADIATION AND X-RAYS ABOVE 60 KEV

被引:38
作者
SCHNEIDER, JR
GONCALVES, OD
ROLLASON, AJ
BONSE, U
LAUER, J
ZULEHNER, W
机构
[1] WACKER CHEMITRON GMBH,D-8263 BURGHAUSEN,FED REP GER
[2] UNIV DORTMUND,INST PHYS,D-4600 DORTMUND 50,FED REP GER
关键词
D O I
10.1016/0168-583X(88)90474-0
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:661 / 674
页数:14
相关论文
共 28 条
[1]   X-RAY-MEASUREMENT OF MINUTE LATTICE STRAIN IN PERFECT SILICON-CRYSTALS [J].
BONSE, U ;
HARTMANN, I .
ZEITSCHRIFT FUR KRISTALLOGRAPHIE, 1981, 156 (3-4) :265-279
[2]  
BONSE U, UNPUB
[3]   EARLY STAGES OF OXYGEN SEGREGATION AND PRECIPITATION IN SILICON [J].
BOURRET, A ;
THIBAULTDESSEAUX, J ;
SEIDMAN, DN .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) :825-836
[4]   INTEGRATED INTENSITIES OF PERFECT CRYSTALS [J].
DEMARCO, JJ ;
WEISS, RJ .
ACTA CRYSTALLOGRAPHICA, 1965, 19 :68-&
[5]  
FREUND AK, 1986, BROOKHAVEN REPORT
[6]   PENDELLOSUNG INTENSITY-BEAT MEASUREMENTS WITH 0.0392- AND 0.0265-A GAMMA-RADIATION IN SILICON [J].
GRAF, HA ;
SCHNEIDER, JR .
PHYSICAL REVIEW B, 1986, 34 (12) :8629-8638
[7]   PENDELLOSUNG FRINGES IN ELASTICALLY DEFORMED SILICON [J].
HART, M .
ZEITSCHRIFT FUR PHYSIK, 1966, 189 (03) :269-&
[8]  
HUFF HR, 1986, SEMICONDUCTOR SILICO
[9]  
HUFF HR, 1981, SEMICONDUCTOR SILICO