DIFFUSION OF BORON IN SILICON DURING POSTIMPLANTATION ANNEALING

被引：157

作者：

SOLMI, S ^{[1
]}

BARUFFALDI, F ^{[1
]}

CANTERI, R ^{[1
]}

机构：

[1] IRST,DIV SCI MAT,I-38050 TRENT,ITALY

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 04期

关键词：

D O I：

10.1063/1.348740

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The diffusion of B implanted in Si has been investigated at different concentrations in a wide range of experimental conditions (temperature from 800 to 1000-degrees-C and time from 10 s to 8 h) by using furnace and rapid thermal treatments. In particular, the transient enhanced diffusion induced by the implantation damage in the early phase of the annealing and the precipitation occurring in concomitance with the diffusion for dopant concentration exceeding the solid solubility have been extensively analyzed. A simulation program taking these phenomena into account has been developed by modifying the SUPREME III code. A satisfactory agreement with experimental data has been obtained for all the investigated conditions. The model represents a significative improvement of the diffusion simulation of B implanted in crystalline Si. In fact, the more commonly used codes of process simulation do not evaluate adequately the effects of the above considered phenomena.

引用

页码：2135 / 2142

页数：8

共 31 条

[1] TEMPERATURE AND TIME-DEPENDENCE OF DOPANT ENHANCED DIFFUSION IN SELF-ION IMPLANTED SILICON [J].