PROSPECTS FOR X-RAY-LITHOGRAPHY

被引:9
作者
FLEMING, D [1 ]
MALDONADO, JR [1 ]
NEISSER, M [1 ]
机构
[1] IBM CORP, FSD, MANASSAS, VA 22110 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 06期
关键词
D O I
10.1116/1.586048
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The essentials of proximity x-ray lithography (XRL) have been established and successful alternative implementations have been demonstrated in academic and industrial laboratories worldwide. Results continue to show that XRL can provide simpler and more robust processes than optical or electron beam alternatives. And it is widely accepted that this becomes more true as lithographic dimensions shrink. So why do we still await the introduction of the first commercial use of XRL? Use of a new technology requires its either attaining the unattainable or excelling at cost/performance. For near term application, XRL must leap the latter hurdle. While most concede the superior robustness of XRL to normal process variation, popular lore has it that availability or an adequate infrastructure limits XRL becoming a process of choice. We discuss the current state of XRL against this competitive challenge and project progress forward. In so doing, we find that XRL is now approaching a critical crossroad. While optical approaches struggle to demonstrate technical realization and electron beam approaches are losing ground in the pixel per chip per second race, XRL's challenge is to mature its infrastructure sufficiently to attract proponents eager to make it the process of choice. The pace of XRL efforts leads us to the conclusion that XRL can be the process of choice for 250 nm applications, most probably beginning with 256 Mb DRAM or NVRAM.
引用
收藏
页码:2511 / 2515
页数:5
相关论文
共 35 条
[1]  
ACOSTA R, 1984, P SOC PHOTO-OPT INS, V484, P114
[2]  
ACOVIC A, IN PRESS APPL PHYS L
[3]  
ANDREWS DE, 1992, UNPUB 36TH P INT S E
[4]   IMAGE-FORMATION IN X-RAY-LITHOGRAPHY - PROCESS OPTIMIZATION [J].
CERRINA, F ;
GUO, JZY ;
TURNER, S ;
OCOLA, L ;
KHAN, M ;
ANDERSON, P .
MICROELECTRONIC ENGINEERING, 1992, 17 (1-4) :135-140
[5]  
CERRINA F, 1990, SYNCHROTRON RAD NEWS, V3, P15
[6]  
DELLAGUARDIA X, 1989, MICROELECTRON ENG, V9, P139
[7]   MECHANISM OF ION-BEAM INDUCED DEPOSITION OF GOLD [J].
DUBNER, AD ;
WAGNER, A .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (06) :1950-1953
[8]   E-BEAM WRITTEN OPTICALLY TRANSPARENT X-RAY MASKS - 4 LEVELS FOR AN INDUSTRIAL VLSI CHIP WITH MEGABIT DESIGN RULES [J].
EHRLICH, C ;
BREITHAUPT, B ;
DEMMELER, R ;
JACOBS, EP ;
KOHLER, C ;
KOHLMANN, K ;
PETSCHNER, M ;
REIMER, K .
MICROELECTRONIC ENGINEERING, 1992, 17 (1-4) :161-165
[9]   PRELIMINARY EVALUATION OF A LASER-BASED PROXIMITY X-RAY STEPPER [J].
FRACKOVIAK, J ;
CELLER, GK ;
FREEMAN, RR ;
JURGENSEN, CW ;
KOLA, RR ;
NOVEMBRE, AE ;
TAI, WW ;
THOMPSON, LF ;
TRIMBLE, LE ;
TOMES, DN .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (06) :3198-3201
[10]  
HILL R, 1991, 3RD P INT S ULSI SCI, P88