S-PASSIVATED INP (100)-(1X1) SURFACE PREPARED BY A WET CHEMICAL PROCESS

A highly stable crystalline S-passivated InP (100) surface has been obtained by a simple wet chemical process, using illumination and heated (NH4)2S solution. Low-energy electron diffraction studies show a (1 x 1) diffraction pattern, which persists even after 3 days of exposure to the atmosphere. High-resolution photoemission studies show that the surface is terminated with a monolayer of sulfur, which forms bridge bonds only to indium. The P 2p core level is identical to that of a vacuum-cleaved InP surface. A possible structural model is presented.