S-PASSIVATED INP (100)-(1X1) SURFACE PREPARED BY A WET CHEMICAL PROCESS

被引:120
作者
TAO, Y
YELON, A
SACHER, E
LU, ZH
GRAHAM, MJ
机构
[1] ECOLE POLYTECH, DEPT GENIE PHYS, MONTREAL H3C 3A7, QUEBEC, CANADA
[2] ECOLE POLYTECH, COUCHES MINCES GRP, MONTREAL H3C 3A7, QUEBEC, CANADA
[3] NATL RES COUNCIL CANADA, INST MICROSTRUCT SCI, OTTAWA K1A 0R9, ONTARIO, CANADA
关键词
D O I
10.1063/1.106890
中图分类号
O59 [应用物理学];
学科分类号
摘要
A highly stable crystalline S-passivated InP (100) surface has been obtained by a simple wet chemical process, using illumination and heated (NH4)2S solution. Low-energy electron diffraction studies show a (1 x 1) diffraction pattern, which persists even after 3 days of exposure to the atmosphere. High-resolution photoemission studies show that the surface is terminated with a monolayer of sulfur, which forms bridge bonds only to indium. The P 2p core level is identical to that of a vacuum-cleaved InP surface. A possible structural model is presented.
引用
收藏
页码:2669 / 2671
页数:3
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