EFFECT OF HELIUM DILUTION DURING PLASMA-ENHANCED DEPOSITION ON ELECTRON TRAPPING IN SILICON DIOXIDE THIN-FILMS

被引：8

作者：

PARK, YC ^{[1
]}

JOHNSON, NM ^{[1
]}

JACKSON, WB ^{[1
]}

STEVENS, KS ^{[1
]}

SMITH, DL ^{[1
]}

HAGSTROM, SB ^{[1
]}

机构：

[1] STANFORD UNIV,DEPT MAT SCI & ENGN,STANFORD,CA 94305

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 06期

关键词：

D O I：

10.1063/1.106540

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of helium dilution during plasma-enhanced chemical vapor deposition (PECVD) of silicon dioxide thin films was studied with avalanche injection and charge trapping techniques. It is shown that, while oxides deposited with He dilution can have low bulk trap densities, they are not lower than films deposited without He dilution. We thus present a more complete specification than previously available of the range of gas-phase deposition conditions that produce device-grade silicon dioxide.

引用

页码：695 / 697

页数：3

共 12 条

[1]

ADAMS AC, 1983, SOLID STATE TECHNOL, V26, P135

[2] SILICON-NITRIDE TRAP PROPERTIES AS REVEALED BY CHARGE-CENTROID MEASUREMENTS ON MNOS DEVICES [J].