MICROTOMOGRAPHY OBSERVATION OF PRECIPITATES IN SEMI-INSULATING GAAS MATERIALS

[1] LOW DISLOCATION, SEMI-INSULATING IN-DOPED GAAS CRYSTALS [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) : 179 - 184

[2] BOURRET ED, 1987, MATERIALS SCI MONOGR, V44, P95

[3] BROWN GT, 1987, UNPUB NATO WORKSHOP, pB1

[4] BROZEL MR, 1987, UNPUB 14TH P INT S G, P2

[5] BROZEL MR, 1986, 1986 P SEM 3 5 MAT H, P133

[6] BUNOD P, 1986, DEF SEMICOND, P1229

[7] EL2 RELATED LEVELS IN GAAS-SI - TRANSMISSION AND DISPERSION IN INFRARED IMAGING [J]. SOLID STATE COMMUNICATIONS, 1985, 54 (07) : 653 - 656

[8] PRECIPITATE IDENTIFICATION IN LEC-GROWN SI-DOPED GAAS [J]. JOURNAL OF CRYSTAL GROWTH, 1988, 87 (01) : 6 - 12

[9] CORNIER JP, 1984, I PHYS C SER, V74, P95

[10] ARSENIC PRECIPITATION AT DISLOCATIONS IN GAAS SUBSTRATE MATERIAL [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) : 2556 - 2560

[1] LOW DISLOCATION, SEMI-INSULATING IN-DOPED GAAS CRYSTALS [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) : 179 - 184

[2] BOURRET ED, 1987, MATERIALS SCI MONOGR, V44, P95

[3] BROWN GT, 1987, UNPUB NATO WORKSHOP, pB1

[4] BROZEL MR, 1987, UNPUB 14TH P INT S G, P2

[5] BROZEL MR, 1986, 1986 P SEM 3 5 MAT H, P133

[6] BUNOD P, 1986, DEF SEMICOND, P1229

[7] EL2 RELATED LEVELS IN GAAS-SI - TRANSMISSION AND DISPERSION IN INFRARED IMAGING [J]. SOLID STATE COMMUNICATIONS, 1985, 54 (07) : 653 - 656

[8] PRECIPITATE IDENTIFICATION IN LEC-GROWN SI-DOPED GAAS [J]. JOURNAL OF CRYSTAL GROWTH, 1988, 87 (01) : 6 - 12

[9] CORNIER JP, 1984, I PHYS C SER, V74, P95

[10] ARSENIC PRECIPITATION AT DISLOCATIONS IN GAAS SUBSTRATE MATERIAL [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) : 2556 - 2560