SPATIAL DEPENDENCE OF TRAPPED HOLES DETERMINED FROM TUNNELING ANALYSIS AND MEASURED ANNEALING

被引：207

作者：

OLDHAM, TR

LELIS, AJ

MCLEAN, FB

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1986年 / 33卷 / 06期

关键词：

D O I：

10.1109/TNS.1986.4334579

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1203 / 1209

页数：7

相关论文

共 28 条

[1] MOSFET AND MOS CAPACITOR RESPONSES TO IONIZING-RADIATION
BENEDETTO, JM
BOESCH, HE
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) : 1461 - 1466
[2] BENEDETTO JM, 1985, IEEE T NUCL SCI, V32
[3] BRUCKER GJ, 1983, IEEE T NUCL SCI, V30, P4189
[4] ESR CENTERS, INTERFACE STATES, AND OXIDE FIXED CHARGE IN THERMALLY OXIDIZED SILICON WAFERS
CAPLAN, PJ
POINDEXTER, EH
DEAL, BE
RAZOUK, RR
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) : 5847 - 5854
[5] CAPLAN PJ, 1981, J APPL PHYS, V52, P879
[6] CMOS HARDNESS PREDICTION FOR LOW-DOSE-RATE ENVIRONMENTS
DERBENWICK, GF
SANDER, HH
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (06) : 2244 - 2247
[7] DEFECT PRODUCTION IN SIO2 BY X-RAY AND CO-60 RADIATIONS
DOZIER, CM
BROWN, DB
THROCKMORTON, JL
MA, DI
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) : 4363 - 4368
[8] USE OF THE SUBTHRESHOLD BEHAVIOR TO COMPARE X-RAY AND CO-60 RADIATION-INDUCED DEFECTS IN MOS-TRANSISTORS
DOZIER, CM
BROWN, DB
FREITAG, RK
THROCKMORTON, JL
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) : 1324 - 1329
[9] EDWARDS AH, UNPUB
[10] RADIATION-INDUCED DEFECTS IN SIO2 AS DETERMINED WITH XPS
GRUNTHANER, FJ
GRUNTHANER, PJ
MASERJIAN, J
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) : 1462 - 1466